Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

1999-02-02

2000-02-29

Mai, Son

Static information storage and retrieval

Floating gate

Particular biasing

36518511, 365210, G11C 1606, G11C 702

Patent

active

060317590

ABSTRACT:
A nonvolatile semiconductor memory device has a block of memory cells. The memory cells are arranged in rows and columns, forming a matrix. Each of the memory cells preferably includes a floating gate type transistor. A column of dummy cell transistors is located adjacent to the memory cell block. A selection circuit is connected to the memory cell block and the column of dummy cell transistors for selecting one of the memory cell transistors and one of the dummy cell transistors. A write circuit applies a first potential corresponding to write data to the selected memory cell and a second potential corresponding to the first potential inverted to the selected dummy cell transistor.

REFERENCES:
patent: 5253201 (1993-10-01), Atsumi et al.
patent: 5659503 (1997-08-01), Sudo et al.
patent: 5768184 (1998-06-01), Hayashi et al.
patent: 5818759 (1998-10-01), Kobayashi

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