Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-05-23
2006-05-23
Phung, Anh (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S210130
Reexamination Certificate
active
07050333
ABSTRACT:
An object of the present invention is to provide a nonvolatile semiconductor memory device having a storage region constructed by a plurality of electrically rewritable nonvolatile memory cells and a booster circuit for boosting a power source voltage to thereby generate a voltage necessary to rewrite the storage region, wherein the power source voltage can be prevented from being decreased in the device and data in the storage region can be stably rewritten. The nonvolatile semiconductor memory device has a voltage determining part for determining a voltage level of a predetermined node in the semiconductor memory device in rewriting of the storage region, and a rewrite unit determining part for determining the number of bits of input data to be rewritten at once on the basis of a result of determination of the voltage determining part.
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Austrian Patent Office search report mailed on Oct. 11, 2004 for Austrian patent application No. 200402164-8 filed on Apr. 20, 2004, 6 pages.
Morrison & Foerster / LLP
Phung Anh
Sharp Kabushiki Kaisha
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