Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-08-23
2005-08-23
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185140, C365S185050
Reexamination Certificate
active
06934191
ABSTRACT:
A nonvolatile semiconductor memory device having a small layout area includes a memory cell array in which a plurality of memory cells are arranged in a row direction and a column direction, wherein each of the memory cells includes a source region, a drain region, a channel region between the source region and the drain region, a word gate and a select gate disposed to face the channel region, and a nonvolatile memory element formed between the word gate and the channel region, wherein the wordline-and-selectline-driver-section includes a plurality of unit wordline-and-selectline-driver-sections, and wherein each of the unit wordline-and-selectline driver sections drives the select gates and the word gates of the memory cells in each row at a single potential.
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Hoang Huan
Oliff & Berridg,e PLC
Seiko Epson Corporation
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