Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2005-05-24

2005-05-24

Mai, Son (Department: 2818)

Static information storage and retrieval

Floating gate

Particular connection

C365S185150, C365S185230, C257S319000, C257S320000

Reexamination Certificate

active

06898120

ABSTRACT:
A memory cell array of a nonvolatile semiconductor memory device includes a plurality of memory cells disposed in a row direction and a column direction. The memory cell array includes a plurality of word lines. Each of the memory cells includes a source region and a drain region. Each of the memory cells includes a select gate and a word gate which are disposed to face a channel region between the source region and the drain region. Each of the memory cells includes a nonvolatile memory element formed between the word gate and the channel region. The word line drive section includes a plurality of unit word line drive sections. Each of the unit word line driver sections drives two of the word lines connected respectively with two of the word gates adjacent to each other in the column direction.

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