Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2005-07-12

2005-07-12

Nguyen, Van Thu (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185110, C365S185210

Reexamination Certificate

active

06917541

ABSTRACT:
This invention provides a nonvolatile semiconductor memory device including a novel memory core portion in which an influence of a parasitic element component in a memory cell information reading path is excluded in a reading operation, and novel sensing means accompanying this memory core structure, so as to achieve rapid sensing. In the memory core portion, a selected memory cell is selected by a global bit line through a local bit line and an adjacent global bit line is connected to a local bit line in a non-selected sector. A column selecting portion connects a pair of the global bit lines to a pair of data bus lines. A load portion having a load equivalent to a parasitic capacitance of a path leading from the memory cell and for supplying a reference current to a reference side is connected to a pair of the data bus lines. A current of the memory cell information is compared with the reference current by a current comparing portion and a differential current is outputted. A path load is equalized by a pair of adjacent paths so that an effect from noise is canceled, thus making it possible to achieve rapid reading.

REFERENCES:
patent: 6091662 (2000-07-01), Mochida
patent: 6101122 (2000-08-01), Hirota
patent: 6359805 (2002-03-01), Hidaka
patent: 6515906 (2003-02-01), Tedrow et al.
patent: 2003/0039142 (2003-02-01), Tsao et al.
patent: 2003/0107912 (2003-06-01), Derner et al.

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