Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2011-08-23

2011-08-23

Mai, Son L (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180, C365S185200, C365S185230, C365S189090

Reexamination Certificate

active

08004902

ABSTRACT:
A nonvolatile memory device includes a memory cell that stores data by presence or absence of electrons accumulated in a floating gate, a read reference current generator that generates a read reference current for reading data from the memory cell based on a constant current from a constant current generator included therein, and a read voltage generator that generates a read voltage to be applied to a control gate of the memory cell during data reading. The read reference current generator generates a monitor voltage that varies according to variation of the read reference current and a threshold voltage of the memory cell. The read voltage generator generates the read voltage based on the monitor voltage.

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patent: 6097639 (2000-08-01), Choi et al.
patent: 7495955 (2009-02-01), Ido
patent: 2009/0296484 (2009-12-01), Wang et al.
patent: 2004-178621 (2004-06-01), None

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