Nonvolatile semiconductor memory device

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

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C365S185170, C365S185130

Reexamination Certificate

active

07924615

ABSTRACT:
The present invention relates to a nonvolatile semiconductor memory, and more specifically relates to a nonvolatile semiconductor memory with increased program throughput. The present invention provides a nonvolatile semiconductor memory device with a plurality of block source lines corresponding to the memory blocks, arranged in parallel to the word lines, a plurality of global source lines arranged in perpendicular to the block source lines; and a plurality of switches for selectively connecting corresponding ones of the block source lines and the global source lines.

REFERENCES:
patent: 2002/0008992 (2002-01-01), Tanaka et al.
patent: 2003/0123272 (2003-07-01), Kang et al.

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