Nonvolatile semiconductor memory cell capable of saving overwrit

Details Nonvolatile semiconductor memory cell capable of saving overwrit Nonvolatile semiconductor memory cell capable of saving overwrit

1995-09-27

1997-11-25

Nelms, David C.

Static information storage and retrieval

Floating gate

Particular biasing

36518517, 36518522, 36518524, G11C 1134

Patent

active

056919417

ABSTRACT:
If data is read from a selected memory cell at the time of overwrite verifying, a potential of a bit line is changed in accordance with data. If a transistor is turned on, a latch circuit is set in accordance with data of the bit line. In a case where there is a memory cell being in an overwrite state, data of the selected memory cell is latched to the latch circuit, and data corresponding to one page is erased. Thereafter, a normally writing operation is executed by data latch to the latch circuit, thereby the memory cell being in the overwrite state can be used as a normal threshold voltage.

REFERENCES:
patent: 5122985 (1992-06-01), Santin
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patent: 5299162 (1994-03-01), Kim et al.
patent: 5357462 (1994-10-01), Tanaka et al.
patent: 5361227 (1994-11-01), Tanaka et al.
patent: 5465235 (1995-11-01), Miyamoto

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