Nonvolatile semiconductor memory cell capable of saving overwrit

Details Nonvolatile semiconductor memory cell capable of saving overwrit Nonvolatile semiconductor memory cell capable of saving overwrit

1999-07-21

2000-05-02

Elms, Richard T.

Static information storage and retrieval

Floating gate

Particular biasing

36518517, 36518522, 36518524, G11C 1134

Patent

active

060580461

ABSTRACT:
If data is read from a selected memory cell at the time of overwrite verifying, a Potential of a bit line is changed in accordance with data. If a transistor is turned on, a latch circuit is set in accordance with data of the bit line. In a case where there is a memory cell being in an overwrite state, data of the selected memory cell is latched to the latch circuit, and data corresponding to one page is erased. Thereafter, a normally writing operation is executed by data latch to the latch circuit, thereby the memory cell being in the overwrite state can be used as a normal threshold voltage.

REFERENCES:
patent: 5691941 (1997-11-01), Imamiya et al.
patent: 5959895 (1999-09-01), Imamiya et al.

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