Nonvolatile semiconductor memory apparatus and manufacturing...

Active solid-state devices (e.g. – transistors – solid-state diode – Semiconductor is an oxide of a metal or copper sulfide

Reexamination Certificate

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Details

C257S295000, C257S044000, C257S004000, C257S005000, C257SE27104, C257SE29170, C257SE29330, C257SE45002, C365S046000, C365S100000, C365S148000

Reexamination Certificate

active

07807995

ABSTRACT:
A nonvolatile semiconductor memory apparatus25comprises a semiconductor substrate11, a lower-layer wire12formed on the semiconductor substrate11, an upper-layer wire20formed above the lower-layer wire12to cross the lower-layer wire12, an interlayer insulating film13provided between the lower-layer wire12and the upper-layer wire20, and a resistance variable layer15which is embedded in a contact hole14formed in the interlayer insulating film13and is electrically connected to the lower-layer wire12and the upper-layer wire20. The upper-layer wire20includes at least two layers which are a lowermost layer21made of an electrically-conductive material having a hydrogen barrier property and an electric conductor layer22having a specific resistance which is lower than a specific resistance of the lowermost layer21.

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