Nonvolatile semiconductor memory apparatus

Details Nonvolatile semiconductor memory apparatus Nonvolatile semiconductor memory apparatus

1995-05-26

1997-06-24

Ngo, Ngan V.

Static information storage and retrieval

Floating gate

Particular connection

257316, 36518512, 36518523, 365208, H01L 29788

Patent

active

056423080

ABSTRACT:
A nonvolatile semiconductor memory apparatus of a reference type is provided with a memory circuit, reference circuit and differential amplifier. A drain current of a reference cell transistor is formed such that it becomes almost half a drain current of a memory cell transistor, thereby enabling the memory circuit to be in symmetric relation with the reference circuit. Therefore, a parastic capacitance in the memory circuit is made to be almost the same as that of the reference circuit, and thus a difference in noise level between a noise input to one input of the differential amplifier and a noise input to the other input of the differential amplifier is made to be almost zero, thereby speeding up the data read-out operation of the semiconductor memory apparatus.

REFERENCES:
patent: 4301518 (1981-11-01), Kleas
patent: 4434479 (1984-02-01), Chen et al.
patent: 4694427 (1987-09-01), Miyamoto et a l.
Canepa et al., "Nonvolatile Memories", IEEE International Solid State Circuits Conference, vol. 31, Feb. 17-19, 1988, pp. 120-121, 323, New York, NY, USA.

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