Nonvolatile semiconductor memory and read method

Details Nonvolatile semiconductor memory and read method Nonvolatile semiconductor memory and read method

1997-12-19

2000-02-15

Nelms, David

Static information storage and retrieval

Floating gate

Multiple values

36518524, G11C 1134

Patent

active

060260149

ABSTRACT:
In a nonvolatile semiconductor memory in which multiple-value information is stored in one memory cell by setting a plurality of threshold values, data is successively read from word lines while continuously changing the word-line read level from a lowest level to a highest level, and the next bit line is selectively precharged in accordance with the data stored in latch means for storing read data.

REFERENCES:
patent: 4188670 (1980-02-01), Hsia
patent: 4198698 (1980-04-01), Ong et al.
patent: 4415937 (1983-11-01), Nishizawa et al.
patent: 5452406 (1995-09-01), Butler et al.
patent: 5781478 (1998-07-01), Takeuchi et al.

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