Nonvolatile semiconductor memory and method for setting...

Details Nonvolatile semiconductor memory and method for setting... Nonvolatile semiconductor memory and method for setting...

2005-07-13

2008-11-18

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185030, C365S185110, C365S185210

Reexamination Certificate

active

07453727

ABSTRACT:
A nonvolatile semiconductor memory includes a memory cell array and a replacement data cell array. The memory cell array includes a plurality of main cell arrays and a plurality of redundancy cell arrays. The replacement data cell array stores a replacement data indicating a replacement of one main cell array by one redundancy cell array. The replacement data cell array includes a plurality of first storage sections and a plurality of second storage sections. The first storage section corresponds to one redundancy cell array and stores a replacement confirmation data indicating whether or not the corresponding one redundancy cell array replaces one main cell array, by nonvolatile memory cells of two bits. The second storage section corresponds to one redundancy cell array and stores an address data indicating an address for one main cell array which is replaced by the corresponding one redundancy cell array.

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