Nonvolatile semiconductor memory and method for controlling...

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185030, C365S185110, C365S185280, C365S185290

Reexamination Certificate

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07405976

ABSTRACT:
A nonvolatile semiconductor memory includes a memory cell array, a flag information storage that stores a write flag indicating success/failure of writing in association with each address of a plurality of data segments contained in the data block, an internal address storage that selects the address where the writing has failed, a write circuit that performs data writing, a comparator that performs verify operation to verify success/failure of the data writing, and a sequence controller that updates a write flag according to the result of the verify operation.

REFERENCES:
patent: 6601132 (2003-07-01), Nomura et al.
patent: 6917543 (2005-07-01), Sato
patent: 6-195989 (1994-07-01), None
patent: 2002-366420 (2002-12-01), None

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