Nonvolatile semiconductor memory

Details Nonvolatile semiconductor memory Nonvolatile semiconductor memory

2007-04-30

2008-10-14

Mai, Son L (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185170, C365S185220

Reexamination Certificate

active

07436714

ABSTRACT:
A nonvolatile semiconductor memory according to examples of the present invention includes a NAND string comprised memory cells connected in series, two select gate transistors each of which is connected to each end of the NAND string, and a write control circuit which makes a first write condition for a selected cell different from a second write condition for the selected cell. The first write condition is that the selected cell is one of two memory cells adjacent to the two select gate transistors. The second write condition is that the selected cell is one of the memory cells except for two memory cells adjacent to the two select gate transistors.

REFERENCES:
patent: 5621684 (1997-04-01), Jung
patent: 6091640 (2000-07-01), Kawahara et al.
patent: 6859394 (2005-02-01), Matsunaga et al.
patent: 2008/0043528 (2008-02-01), Isobe et al.
patent: 11-219595 (1999-08-01), None
patent: 2005-327436 (2005-11-01), None

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