Nonvolatile semiconductor memory

Details Nonvolatile semiconductor memory Nonvolatile semiconductor memory

2007-01-16

2007-01-16

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185200, C365S185230

Reexamination Certificate

active

11245336

ABSTRACT:
A nonvolatile semiconductor memory includes a memory cell6composed of a memory cell transistor1having a floating gate and a control gate and a memory cell selecting transistor2, a reference cell12composed of a reference cell transistor30having the same structure as the memory cell transistor1and a reference cell selecting transistor8, and a reference word line potential generating circuit31connected to a gate of the reference cell selecting transistor8, wherein, in a reading operation, the same power supply voltage is applied between a floating gate and a source node of the reference cell transistor30, and an intermediate potential between a potential applied when the memory cell selecting transistor2is selected and a potential applied when the memory cell selecting transistor2is not selected is applied to the gate of the reference cell selecting transistor8.

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patent: 10-228790 (1998-08-01), None

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