Nonvolatile semiconductor memory

Details Nonvolatile semiconductor memory Nonvolatile semiconductor memory

2006-11-21

2006-11-21

Zarabian, Amir (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185060, C365S185070, C365S185170, C365S072000

Reexamination Certificate

active

07139194

ABSTRACT:
Each nonvolatile memory cell transistor has such directivities that a current flows only from the drain to the source and that charge is exchangeable only at the source. The source of one of a pair of memory cell transistors connected to each word line is connected to the drain of the other memory cell transistor, and the drain of the one memory cell transistor is connected to the source of the other. During a data rewrite operation, reverse voltages are applied to the sources and drains of the pair of memory cell transistors. Because of the directivities of each memory cell transistor, charge is exchanged with a charge accumulation layer only in the source region. This makes the data rewritable in only one of the pair of memory cell transistors. As a result, data is rewritable on a memory cell basis without increasing the memory cell size.

REFERENCES:
patent: 5610858 (1997-03-01), Iwahashi
patent: 5671177 (1997-09-01), Ueki
patent: 5760437 (1998-06-01), Shimoji
patent: 6768683 (2004-07-01), Fastow et al.
patent: 6984863 (2006-01-01), Miida
patent: 06-061505 (1994-03-01), None
patent: 08-036889 (1996-02-01), None
patent: 8-36894 (1996-02-01), None
patent: 08-279295 (1996-10-01), None
patent: 09-306185 (1997-11-01), None

Affiliated with

Also associated with

Rating

Nonvolatile semiconductor memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile semiconductor memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3626860