Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-03-28
2006-03-28
Tran, Michael T. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185180
Reexamination Certificate
active
07020025
ABSTRACT:
A semiconductor memory includes a memory cell array having a memory cell units, configured from memory cell transistors connected in a column, which have a first and a second control gate disposed on both sides of a floating gate horizontally arranged with a first end connected to a bit line via a first select-gate transistor, and a second end connected to a source line via a second select-gate transistor. The first and the second control gate of memory cell transistors arranged in the same row are connected in common to a first and a second control gate line in a row, respectively. It also includes a boosting circuit, which generates a write-in voltage, multilevel intermediate voltages, and a bit line voltage from a power source, and a row decoder supplied with the write-in voltage and the multilevel intermediate voltages to select the first and the second control gate.
REFERENCES:
patent: 6314026 (2001-11-01), Satoh et al.
patent: 6459612 (2002-10-01), Satoh et al.
patent: 6567310 (2003-05-01), Einaga et al.
patent: 6580644 (2003-06-01), Chung
patent: 6801458 (2004-10-01), Sakui et al.
patent: 6804150 (2004-10-01), Park et al.
patent: 6850438 (2005-02-01), Lee et al.
patent: 6894931 (2005-05-01), Yaegashi et al.
patent: 2000-228092 (2000-08-01), None
patent: 2002-260390 (2002-09-01), None
U.S. Appl. No. 10/648,510, filed Aug. 27, 2003, Arai et al.
U.S. Appl. No. 10/700,508, filed Nov. 5, 2003, Arai et al.
U.S. Appl. No.10/405,233, filed Apr. 3, 2003, Matsunaga et al.
U.S. Appl. No. 10/370,512, filed, Feb. 24, 2003, Arai et al.
U.S. Appl. No. 10/090,995, filed Mar. 6, 2002, Matsunaga et al.
Arai Fumitaka
Matsunaga Yasuhiko
Sato Atsuhiro
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