Nonvolatile semiconductor memory

Details Nonvolatile semiconductor memory Nonvolatile semiconductor memory

2005-04-26

2005-04-26

Hoang, Huan (Department: 2818)

Static information storage and retrieval

Floating gate

Particular connection

C365S185170, C365S185180

Reexamination Certificate

active

06885583

ABSTRACT:
A bit line is connected to a data circuit for use in a program/read time. The data circuit includes first, second, and third data storage units. The first data storage unit is connected to the bit line. A first data transfer circuit is connected between the first and third data storage units. A second data transfer circuit is connected between the second and third data storage units. The second data storage unit has a function of forcibly changing a value of data of the first data storage unit based on the data stored in the second data storage unit.

REFERENCES:
patent: 5521858 (1996-05-01), Shibata et al.
patent: 6370058 (2002-04-01), Fukumoto
patent: 6625060 (2003-09-01), Miyauchi
patent: 1 134 746 (2001-09-01), None
G.J. Hemink, et al. “Fast and Accurate Programming Method For Multi-Level NAND EEPROMs” 1995 Symposium on VLSI Technology Digest of Technical Papers 1999, pp. 129-130.

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