Nonvolatile semiconductor memory

Static information storage and retrieval – Read only systems – Resistive

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S096000, C365S185230, C365S189090, C365S225700

Reexamination Certificate

active

07924598

ABSTRACT:
A nonvolatile semiconductor memory according to an aspect of the invention includes a memory cell array and a power supply circuit. The memory cell array includes memory cells each having an insulating film and being programmed to store information by inflicting an electric stress on the insulating film to break the insulating film. The power supply circuit supplies to the memory cell a program voltage for the electric stress depending on a negative temperature coefficient the electric stress.

REFERENCES:
patent: 6147908 (2000-11-01), Abugharbieh et al.
patent: 7046569 (2006-05-01), Ito et al.
patent: 7345903 (2008-03-01), Nakano et al.
patent: 7388770 (2008-06-01), Namekawa et al.
patent: 2008/0316852 (2008-12-01), Matsufuji et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Nonvolatile semiconductor memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile semiconductor memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2736610

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.