Nonvolatile semiconductor memory

Details Nonvolatile semiconductor memory Nonvolatile semiconductor memory

1988-07-08

1989-09-19

Carroll, J.

357 6, 357 235, 357 2315, H01L 2934, H01L 2978

Patent

active

048686328

ABSTRACT:
In an MONOS type nonvolatile semiconductor memory comprising a channel forming semiconductor region between source and drain regions in a surface of a substrate; a tunnel insulating film formed on the channel forming semiconductor region in the surface of the substrate, the tunnel insulating film permitting charge-injection; a silicon nitride film formed as a second insulating film on the tunnel insulating film; a silicon oxide film formed as a third insulating film; and a conductive electrode formed on the silicon oxide film, the silicon nitride film has a composition close to a stoichiometric value of Si.sub.3 N.sub.4 at a portion near an interface with the tunnel insulating film and has a composition of excess silicon at a portion of the thickness of the same film except near the interface with the tunnel insulating film.

REFERENCES:
patent: 4519051 (1985-05-01), Fuji
patent: 4618541 (1986-10-01), Forouhi et al.

Affiliated with

Also associated with

Rating

Nonvolatile semiconductor memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile semiconductor memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-372739