Static information storage and retrieval – Floating gate – Particular biasing
Patent
1990-03-16
1991-08-13
Fears, Terrell W.
Static information storage and retrieval
Floating gate
Particular biasing
365 51, 365 63, G11C 1140, G11C 1300
Patent
active
050401475
ABSTRACT:
A nonvolatile semiconductor memory is a programmable and erasable nonvolatile semiconductor memory including a semiconductor substrate of a first conductivity type, source and drain diffusion layers in the semiconductor substrate, and a channel region between the source and drain diffusion layers. A first insulation film is continuously on the channel region and the drain diffusion layer adjacent to the channel region, and a floating gate layer is on the first insulation film. Further, a second insulation film having a thin film portion which is thinner than the first insulation film is on the floating gate layer, and a control gate layer is on the second insulation film.
REFERENCES:
patent: 4361847 (1982-11-01), Harari
Patent Abstracts of Japan, vol. 6, Number 230 (E-142) [1108] Nov. 16, 1982.
Maruyama Tadashi
Mohri Katsuaki
Nakashiro Takeshi
Yoshizawa Makoto
Fears Terrell W.
Kabushiki Kaisha Toshiba
LandOfFree
Nonvolatile semiconductor memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nonvolatile semiconductor memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1532337