Nonvolatile semiconductor memory

Details Nonvolatile semiconductor memory Nonvolatile semiconductor memory

2008-03-06

2010-11-23

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185170, C365S185180, C365S154000, C365S226000, C716S030000, C716S030000

Reexamination Certificate

active

07839679

ABSTRACT:
A nonvolatile semiconductor memory according to an aspect of the invention includes memory cell arrays including plural cell units, a power supply pad disposed on one end in a first direction of the memory cell arrays, and page buffers disposed in the first direction of the memory cell arrays. The nonvolatile semiconductor memory also includes plural bit lines which are disposed on the memory cell arrays while extending in the first direction and a first power supply line which is disposed on the plural bit lines on the memory cell arrays to connect the power supply pad and the page buffers.

REFERENCES:
patent: 5625590 (1997-04-01), Choi et al.
patent: 7000207 (2006-02-01), Gothoskar et al.
patent: 7031179 (2006-04-01), Yon et al.
patent: 2006/0056229 (2006-03-01), Maeda et al.
patent: 2006/0198196 (2006-09-01), Abe et al.

Affiliated with

Also associated with

Rating

Nonvolatile semiconductor memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile semiconductor memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4252107