Nonvolatile punch through memory cell with buried n+ region in c

Details Nonvolatile punch through memory cell with buried n+ region in c Nonvolatile punch through memory cell with buried n+ region in c

1977-09-30

1979-08-07

Clawson, Jr., Joseph E.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 13, 357 54, 357 59, 307238, 365184, H01L 2978

Patent

active

041639855

ABSTRACT:
A nonvolatile memory cell is disclosed that has a buried n+ layer from which charge (electrons) is injected into the insulator of n-channel MNOS (Metal Nitride Oxide Semiconductor) type devices.

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J. Verwey et al., "Atmos-An electrically Reprogrammable Read-only Memory Device, "IEEE Transon Elec. Dev., vol. ED-21#10, Oct. 1974, pp. 631-635.
W. Johnson, "Multiple Masking Technique in Ion Implantation," IBM Tech. Discl. Bull., vol. 15#2, Jul. 1972, pp. 660-661.

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