Nonvolatile programmable resistor memory cell

Details Nonvolatile programmable resistor memory cell Nonvolatile programmable resistor memory cell

2006-06-30

2009-08-04

Nguyen, Thinh T (Department: 2818)

Semiconductor device manufacturing: process

Making passive device

Resistor

C438S382000, C438S104000, C257S194000, C365S148000

Reexamination Certificate

active

07569459

ABSTRACT:
A nonvolatile programmable resistance memory cell comprising a high-mobility ion conductor and a method for fabricating the same are provides. The memory cell comprises of a first and second electrode and a reversible and persistent programmable resistance structure connecting the first and second electrode. The resistance is modifiable by altering the ionic distribution of a high-mobility oxygen ion conductor region. As an alternate embodiment, the memory cell further includes a transition-metal oxide region.

REFERENCES:
patent: 7402456 (2008-07-01), Zhuang et al.

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