Static information storage and retrieval – Magnetic bubbles – Guide structure
Patent
1989-03-27
1991-01-29
Hille, Rolf
Static information storage and retrieval
Magnetic bubbles
Guide structure
357 236, 357 68, 365185, H01L 2968, H01L 2978, H01L 2348, G11C 1134
Patent
active
049890530
ABSTRACT:
A floating gate transistor structure including a semiconductor substrate, an access gate dielectrically separated from the substrate, and a floating gate having (a) a first portion dielectrically separated from the substrate by a floating gate oxide region and a tunnel oxide region and (b) a second portion at last partially overlying and dielectrically separated from the access gate. A metal control gate overlies and is dielectrically separated from the floating gate. Also disclosed is a precision capacitor having a doped region as a first capacitor plate and a metal gate as a second capacitor plate.
The floating gate transistor structure can be made with a process which includes the steps of forming a gate oxide layer on semiconductor substrate, forming an access gate on the gate oxide layer, and forming an interpoly oxide layer over the access gate and a floating gate oxide layer on the substrate laterally adjacent the gate oxide. A tunnel oxide region is formed in the floating gate oxide layer, and a floating gate is then formed on the interpoly oxide, the floating gate oxide, and the tunnel oxide. An oxide layer is formed over the floating gate, and a metal control gate is formed thereon. The precision capacitor is advantageously made pursuant to certain of the foregoing steps.
REFERENCES:
patent: 4513397 (1985-04-01), Ipri et al.
patent: 4597000 (1986-06-01), Adam
patent: 4618876 (1986-10-01), Stewart et al.
patent: 4646425 (1987-03-01), Owens et al.
patent: 4833096 (1989-05-01), Huang et al.
International Electron Devices Meeting, Dec. 9-12 1984, R. C. Stewart et al, "A Shielded Substrate Injector MOS (SSIMOS) EEPROM Cell" pp. 472-475.
International Electron Devices Meeting, Dec. 11-14 1988, H. Arima et al, "A Novel Process Technology and Cell Structure for Mega Bit EEPROM" pp. 420-423.
Denson-Low W. K.
Gudmestad Terje
Hille Rolf
Limanek Robert P.
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