Nonvolatile MNOS memory

Details Nonvolatile MNOS memory Nonvolatile MNOS memory

1983-09-23

1986-12-16

Munson, Gene M.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 239, 357 2311, 357 41, 357 48, 357 54, 357 59, 365184, H01L 2978, H01L 2702, H01L 2934

Patent

active

046300864

ABSTRACT:
A nonvolatile memory which has both the merits of a floating gate type EEPROM and an MNOS type EEPROM and which can be written into and erased with low voltages is disclosed. Each memory element in the nonvolatile memory has a floating gate, a control gate, a gate insulator film between a semiconductor body and the floating gate, and an inter-layer insulator film between the control gate and the floating gate. The gate insulator film is made up of a very thin SiO.sub.2 film and a thin Si.sub.3 N.sub.4 film formed thereon. The charge centroid of charges injected for storing data lies within the floating gate, not within the Si.sub.3 N.sub.4 film.

REFERENCES:
patent: 3856587 (1974-12-01), Yamazaki et al.
patent: 3878549 (1975-04-01), Yamazaki et al.
patent: 4115914 (1978-09-01), Harari
patent: 4375087 (1983-02-01), Wanlass

Affiliated with

Also associated with

Rating

Nonvolatile MNOS memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile MNOS memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile MNOS memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-248084