Nonvolatile memory with erasable parts

Details Nonvolatile memory with erasable parts Nonvolatile memory with erasable parts

2008-01-08

2008-01-08

Ho, Hoai V. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185170, C365S185270, C365S185280

Reexamination Certificate

active

11504017

ABSTRACT:
In a nonvolatile memory in which a load on a boosting circuit changes according to the number of rewrite bytes, the boosting circuit is configured so as to perform voltage boosting at a relatively slow predetermined speed regardless of the number of rewrite bytes, whereby stress applied to each storage element is reduced and rewrite resistance is enhanced.

REFERENCES:
patent: 5404338 (1995-04-01), Murai et al.
patent: 5825689 (1998-10-01), Wakita
patent: 6011725 (2000-01-01), Eitan
patent: 6023424 (2000-02-01), Miyamoto et al.
patent: 6208200 (2001-03-01), Arakawa
patent: 6452839 (2002-09-01), Ahn et al.
patent: 6515909 (2003-02-01), Wooldridge
patent: 6735125 (2004-05-01), Hirano
patent: 59-211281 (1984-11-01), None
patent: 2-123599 (1990-05-01), None
patent: 2-161694 (1990-06-01), None
patent: 7-130190 (1995-05-01), None

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