Nonvolatile memory with correlated multiple pass programming

Details Nonvolatile memory with correlated multiple pass programming Nonvolatile memory with correlated multiple pass programming

2010-10-06

2011-10-25

Elms, Richard (Department: 2824)

Static information storage and retrieval

Floating gate

Multiple values

C365S185180, C365S185190, C365S185220

Reexamination Certificate

active

08045378

ABSTRACT:
A group of memory cells is programmed respectively to their target states in parallel using a multiple-pass programming method in which the programming voltages in the multiple passes are correlated. Each programming pass employs a programming voltage in the form of a staircase pulse train with a common step size, and each successive pass has the staircase pulse train offset from that of the previous pass by a predetermined offset level. The predetermined offset level is less than the common step size and may be less than or equal to the predetermined offset level of the previous pass. Thus, the same programming resolution can be achieved over multiple passes using fewer programming pulses than conventional method where each successive pass uses a programming staircase pulse train with a finer step size. The multiple pass programming serves to tighten the distribution of the programmed thresholds while reducing the overall number of programming pulses.

REFERENCES:
patent: 5070032 (1991-12-01), Yuan et al.
patent: 5095344 (1992-03-01), Harari
patent: 5172338 (1992-12-01), Mehrotra et al.
patent: 5289401 (1994-02-01), Shima
patent: 5313421 (1994-05-01), Guterman et al.
patent: 5315541 (1994-05-01), Harari et al.
patent: 5343063 (1994-08-01), Yuan et al.
patent: 5570315 (1996-10-01), Tanaka et al.
patent: 5595924 (1997-01-01), Yuan et al.
patent: 5661053 (1997-08-01), Yuan
patent: 5701266 (1997-12-01), Fazio et al.
patent: 5729489 (1998-03-01), Fazio et al.
patent: 5768192 (1998-06-01), Eitan
patent: 5774397 (1998-06-01), Endoh et al.
patent: 5903495 (1999-05-01), Takeuchi et al.
patent: 6011725 (2000-01-01), Eitan
patent: 6046935 (2000-04-01), Takeuchi et al.
patent: 6222762 (2001-04-01), Guterman et al.
patent: 6366496 (2002-04-01), Torelli et al.
patent: 6614683 (2003-09-01), Parker
patent: 6714448 (2004-03-01), Manea
patent: 6888758 (2005-05-01), Hemink et al.
patent: 7042766 (2006-05-01), Wang et al.
patent: 7095654 (2006-08-01), Quader et al.
patent: 7151692 (2006-12-01), Wu
patent: 7158413 (2007-01-01), Kasai et al.
patent: 7251160 (2007-07-01), Li et al.
patent: 7366014 (2008-04-01), Micheloni et al.
patent: 7414887 (2008-08-01), Guterman et al.
patent: 7426138 (2008-09-01), Wong
patent: 7447081 (2008-11-01), Cahn
patent: 7453731 (2008-11-01), Tu et al.
patent: 7508713 (2009-03-01), Sekar et al.
patent: 7508715 (2009-03-01), Lee
patent: 7545677 (2009-06-01), Lee et al.
patent: 7551483 (2009-06-01), Cernea
patent: 7590007 (2009-09-01), Futatsuyama
patent: 7606084 (2009-10-01), Kamei
patent: 7643348 (2010-01-01), Cernea
patent: 7796435 (2010-09-01), Cernea
patent: 7813172 (2010-10-01), Cernea
patent: 2002/0191444 (2002-12-01), Gregori et al.
patent: 2003/0002374 (2003-01-01), Tedrow
patent: 2005/0219906 (2005-10-01), Wu
patent: 2006/0140007 (2006-06-01), Cernea et al.
patent: 2007/0030732 (2007-02-01), Micheloni et al.
patent: 2007/0091681 (2007-04-01), Gongwer et al.
patent: 2007/0159891 (2007-07-01), Tu et al.
patent: 2007/0263450 (2007-11-01), Cernea et al.
patent: 2008/0062765 (2008-03-01), Tu et al.
patent: 2008/0137432 (2008-06-01), Lee et al.
patent: 2008/0253193 (2008-10-01), Cernea
patent: 2008/0253197 (2008-10-01), Cernea
patent: 2008/0310234 (2008-12-01), Lee et al.
patent: 2009/0310418 (2009-12-01), Cernea
patent: 2009/0310419 (2009-12-01), Cernea
patent: 2009/0310420 (2009-12-01), Cernea
patent: 2009/0310421 (2009-12-01), Cernea
patent: 2010/0046297 (2010-02-01), Cernea
patent: 2010/0097857 (2010-04-01), Cernea
patent: 0 913 832 (1999-05-01), None
patent: 1 074 995 (2001-02-01), None
patent: 2001-057091 (2001-02-01), None
patent: I256644 (2006-06-01), None
patent: 200634826 (2006-10-01), None
patent: WO 2008/002832 (2008-01-01), None
patent: WO 2008/002832 (2008-01-01), None
Eitan et al., “NROM: A Novel Localized Trapping, 2-Bit Nonvolatile Memory Cell,” IEEE Electron Device Letters, vol. 21, No. 11, Nov. 2000, pp. 543-545.
EPO/ISA, “Notification of Transmittal of the International Search Report and the Written Opinion of the International Searching Authority, or the Declaration,” corresponding International Patent Application No. PCT/US2009/046318, mailed on Jan. 29, 2010, 13 pages.
USPTO, “Office Action,” mailed in related U.S. Appl. No. 12/138,382 on Jan. 26, 2010, 18 pages.
USPTO, “Notice of Allowance and Fee(s) Due,” mailed in related U.S. Appl. No. 12/138,382 on May 19, 2010, 15 pages.

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