Nonvolatile memory with controlled voltage boosting speed

Details Nonvolatile memory with controlled voltage boosting speed Nonvolatile memory with controlled voltage boosting speed

2005-02-08

2005-02-08

Ho, Hoai (Department: 2818)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185270, C365S185290

Reexamination Certificate

active

06853582

ABSTRACT:
In a nonvolatile memory in which a load on a boosting circuit changes according to the number of rewrite bytes, the boosting circuit is configured so as to perform voltage boosting at a relatively slow predetermined speed regardless of the number of rewrite bytes, whereby stress applied to each storage element is reduced and rewrite resistance is enhanced.

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