Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2011-06-07
2011-06-07
Tran, Andrew Q (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185250, C365S185170, C365S185330
Reexamination Certificate
active
07957197
ABSTRACT:
Sensing circuits for sensing a conduction current of a memory cell among a group of non-volatile memory cells being sensed in parallel and providing the result of the sensing to a data bus are presented. A precharge circuit is coupled to a node for charging the node to an initial voltage. An intermediate circuit is also coupled to the node and connectable to the memory cell, by which current from the precharge circuit can be supplied to the memory cell. The circuit also includes a comparator circuit to perform a determination of the conduction current by a rate of discharge at the node; a data latch coupled to the comparator circuit to hold the result of this determination; and a transfer gate coupled to the data latch to supply a latched result to the data bus independently of the node. This arrangement improves sensing performance and can help to eliminate noise on the analog sensing path during sensing and reduce switching current.
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Lee Seungpil
Mui Man Lung
Nguyen Hao Thai
Wang Chi-Ming
Zhang Fanglin
Davis , Wright, Tremaine, LLP
SanDisk Corporation
Tran Andrew Q
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