Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2011-08-23
2011-08-23
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185020, C365S185180, C365S185240
Reexamination Certificate
active
08004905
ABSTRACT:
A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.
REFERENCES:
patent: 5297029 (1994-03-01), Nakai et al.
patent: 5303198 (1994-04-01), Adachi et al.
patent: 5327383 (1994-07-01), Merchant et al.
patent: 5347489 (1994-09-01), Merchant et al.
patent: 5509018 (1996-04-01), Niijima et al.
patent: 5509134 (1996-04-01), Fandrich et al.
patent: 5541886 (1996-07-01), Hasbun
patent: 5982668 (1999-11-01), Ishii et al.
patent: 6023425 (2000-02-01), Ishii et al.
patent: 6067598 (2000-05-01), Roohparvar et al.
patent: 6102963 (2000-08-01), Agrawal
patent: 6157573 (2000-12-01), Ishii et al.
patent: 6243313 (2001-06-01), Sakamoto et al.
patent: 6266792 (2001-07-01), Wada
patent: 6333871 (2001-12-01), Tsujikawa et al.
patent: 6452838 (2002-09-01), Ishii et al.
patent: 6496418 (2002-12-01), Kawahara et al.
patent: 6507520 (2003-01-01), Tsujikawa et al.
patent: 6731537 (2004-05-01), Kanamori et al.
patent: 6839826 (2005-01-01), Cernea
patent: 6922359 (2005-07-01), Ooishi
patent: 7079416 (2006-07-01), Yamada et al.
patent: 7283398 (2007-10-01), He et al.
patent: 7307896 (2007-12-01), Doyle et al.
patent: 2001/0021128 (2001-09-01), Kim
patent: 2002/0103958 (2002-08-01), Kuwano
patent: 2003/0147283 (2003-08-01), Miwa et al.
patent: 2005/0043823 (2005-02-01), Morita
patent: 62-099996 (1987-05-01), None
patent: 4-147495 (1992-05-01), None
patent: 6-111589 (1994-04-01), None
patent: 7-169288 (1995-07-01), None
R. Frizzell, NAND Flash Operation, National Semiconductor Application Note 922, Dec. 1993, 8 pp.
NM29N16 16 MBit (2M=8 Bit) CMOS NAND Flash E2PROM, National Semiconductor, Feb. 1996, 30 pp.
R. Frizzell, Second Sources for the NM29N16 NAND Flash, National Semiconductor Application Note 993, Apr. 1995, 2 pp.
Ishii Tatsuya
Kubono Shooji
Miwa Hitoshi
Tsuchiya Osamu
Mattingly & Malur, PC
Nguyen Hien N
Nguyen Vanthu
Renesas Electronics Corporation
LandOfFree
Nonvolatile memory system, semiconductor memory and writing... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nonvolatile memory system, semiconductor memory and writing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile memory system, semiconductor memory and writing... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2713651