Nonvolatile memory programmable by a heat induced chemical...

Details Nonvolatile memory programmable by a heat induced chemical... Nonvolatile memory programmable by a heat induced chemical...

2005-10-18

2005-10-18

Phung, Anh (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185270, C365S185180

Reexamination Certificate

active

06956774

ABSTRACT:
A nonvolatile memory cell occupying a minimum chip area including a cell structure that includes two or more base materials being programmable by a heat induced chemical reaction to form a layer or layers of alloy. The formation of alloy results in a change in resistance of the cell structure so that one or more programmed states are determined. A semiconductor memory constructed by a large number of the nonvolatile memory cells can be obtained in a compact manner with simple and as few as possible steps. This process vertically stacked layers, and this semiconductor memory is thus easily to be combined with other integrated circuits on a single chip.

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