Nonvolatile memory process

Details Nonvolatile memory process Nonvolatile memory process

1993-12-27

1995-12-12

Thomas, Tom

Fishing, trapping, and vermin destroying

437 52, H01L 218247

Patent

active

054749476

ABSTRACT:
A process for fabricating an improved nonvolatile memory device includes the formation of a control gate electrode (70) which overlies a floating gate electrode (42) and is separated therefrom by an inter-level-dielectric layer (62). The control gate electrode (70) and the underlying floating gate electrode (42) form a stacked gate structure (72) located in the active region (44) of a semiconductor substrate (40). An electrically insulating sidewall spacer (54) is formed at the edges of the floating gate electrode (42) and electrically isolates the control gate (70) from the semiconductor substrate (40). During the fabrication process, implanted memory regions (56, 58) are formed in the active region (44) prior to the formation of control gate electrode (70). A word-line (68) and the control gate (70) are formed by anisotropic etching of a semiconductor layer (66), which is deposited to overlie inter-level-dielectric layer (62). During the etching process, inter-level-dielectric layer (62) prevents the removal of surface portions of semiconductor substrate (40).

REFERENCES:
patent: 4328565 (1982-05-01), Harari
patent: 4799991 (1989-01-01), Dockrey
patent: 4806201 (1989-02-01), Mitchell et al.
patent: 4924437 (1990-05-01), Paterson et al.
patent: 4994403 (1991-02-01), Gill
patent: 5063172 (1991-11-01), Manley
patent: 5081054 (1992-01-01), Wu et al.
patent: 5100819 (1992-03-01), Gill et al.

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