Nonvolatile memory element, nonvolatile memory apparatus,...

Details Nonvolatile memory element, nonvolatile memory apparatus,... Nonvolatile memory element, nonvolatile memory apparatus,...

2011-04-05

2011-04-05

Mandala, Victor (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Semiconductor is an oxide of a metal or copper sulfide

C257S005000, C257S044000, C257S310000, C257SE45003, C257SE21459, C438S104000, C356S148000

Reexamination Certificate

active

07919774

ABSTRACT:
A lower electrode layer2, an upper electrode layer4formed above the lower electrode layer2, and a metal oxide thin film layer3formed between the lower electrode layer2and the upper electrode layer4are provided. The metal oxide thin film layer3includes a first region3awhose value of resistance increases or decreases by an electric pulse that is applied between the lower electrode layer2and the upper electrode layer4and a second region3barranged around the first region3aand having a larger content of oxygen than the first region3a, wherein the lower and upper electrode layers2and4and at least a part of the first region3aare arranged so as to overlap as viewed from the direction of the thickness of the first region3a.

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