Semiconductor device manufacturing: process – Making passive device – Resistor
Reexamination Certificate
2011-04-12
2011-04-12
Sarkar, Asok K (Department: 2891)
Semiconductor device manufacturing: process
Making passive device
Resistor
C438S385000, C438S102000, C257SE21071, C257SE21075
Reexamination Certificate
active
07923342
ABSTRACT:
A nonvolatile memory element and associated production methods and memory element arrangements are presented. The nonvolatile memory element has a changeover material and a first and second electrically conductive electrode present at the changeover material. To reduce a forming voltage, a first electrode has a field amplifier structure for amplifying a field strength of an electric field generated by a second electrode in a changeover material. The field amplifier structure is a projection of the electrodes which projects into the changeover material. The memory element arrangement has multiple nonvolatile memory elements which are arranged in matrix form and can be addressed via bit lines arranged in column form and word lines arranged in row form.
REFERENCES:
patent: 3401318 (1968-09-01), Jensen
patent: 4292343 (1981-09-01), Plaettner et al.
patent: 4599705 (1986-07-01), Holmberg et al.
patent: 5166758 (1992-11-01), Ovshinsky et al.
patent: 5687112 (1997-11-01), Ovshinsky
patent: 5789277 (1998-08-01), Zahorik et al.
patent: 5923637 (1999-07-01), Shimada et al.
patent: 5973335 (1999-10-01), Shannon
patent: 6087674 (2000-07-01), Ovshinsky et al.
patent: 6111264 (2000-08-01), Wolstenholme et al.
patent: 6284643 (2001-09-01), Reinberg
patent: 6287887 (2001-09-01), Gilgen
patent: 6287919 (2001-09-01), Zahorik
patent: 6294452 (2001-09-01), Doan et al.
patent: 6348365 (2002-02-01), Moore et al.
patent: 6545903 (2003-04-01), Wu
patent: 6646902 (2003-11-01), Gilton et al.
patent: 6670628 (2003-12-01), Lee et al.
patent: 6717234 (2004-04-01), Perner et al.
patent: 6746892 (2004-06-01), Lee et al.
patent: 6870751 (2005-03-01), Van Brocklin et al.
patent: 2001/0002046 (2001-05-01), Reinberg et al.
patent: 2001/0049189 (2001-12-01), Zahorik
patent: 2002/0168852 (2002-11-01), Harshfield et al.
patent: 1449062 (2003-10-01), None
patent: 1 465 450 (1970-07-01), None
patent: 1083154 (1967-09-01), None
patent: WO 90/00817 (1990-01-01), None
patent: WO 90/13921 (1990-11-01), None
Breuil Laurent
Schuler Franz
Tempel Georg
Brinks Hofer Gilson & Lione
Infineon - Technologies AG
Sarkar Asok K
Slutsker Julia
LandOfFree
Nonvolatile memory element and production method thereof and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nonvolatile memory element and production method thereof and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile memory element and production method thereof and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2660389