Nonvolatile memory element and manufacturing method thereof

Details Nonvolatile memory element and manufacturing method thereof Nonvolatile memory element and manufacturing method thereof

2011-02-08

2011-02-08

Dickey, Thomas L (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257SE27004, C257SE45002, C365S163000

Reexamination Certificate

active

07884346

ABSTRACT:
A nonvolatile memory element comprising: a first electrode2; a second electrode6formed above the first electrode2; a variable resistance film4formed between the first electrode2and the second electrode6, a resistance value of the variable resistance film4being increased or decreased by an electric pulse applied between the first and second electrodes2, 6; and an interlayer dielectric film3provided between the first and second electrodes2, 6, wherein the interlayer dielectric film3is provided with an opening extending from a surface thereof to the first electrode2; the variable resistance film4is formed at an inner wall face of the opening; and an interior region of the opening which is defined by the variable resistance film4is filled with an embedded insulating film5.

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