Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2008-06-30
2010-10-26
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S185180, C365S185200, C365S185290
Reexamination Certificate
active
07821834
ABSTRACT:
A charge trap flash memory device includes a flash memory array having at least a first page of charge trap memory cells therein electrically coupled to a first word line. The first page of charge trap memory cells includes a plurality of addressable memory cells configured to store data to be retrieved during read operations and a plurality of immediately adjacent non-addressable “dummy” memory cells configured to store dummy data that is not retrievable during the read operations. The plurality of dummy memory cells include at least one auxiliary dummy memory cell that operates as a buffer against lateral hole transfer within a charge trap layer of the array.
REFERENCES:
patent: 5274599 (1993-12-01), Ema
patent: 6078522 (2000-06-01), Park et al.
patent: 6541858 (2003-04-01), Farrar
patent: 6611460 (2003-08-01), Lee et al.
patent: 6614688 (2003-09-01), Jeong et al.
patent: 6858906 (2005-02-01), Lee et al.
patent: 6881626 (2005-04-01), Lee et al.
patent: 6922359 (2005-07-01), Ooishi
patent: 6947330 (2005-09-01), Lee
patent: 7016226 (2006-03-01), Shibata et al.
patent: 7126185 (2006-10-01), Kang et al.
patent: 7170795 (2007-01-01), Lee
patent: 7179709 (2007-02-01), Kim et al.
patent: 2006/0171209 (2006-08-01), Sim et al.
patent: 2006/0267079 (2006-11-01), Huang et al.
patent: 2007/0064498 (2007-03-01), Lee et al.
patent: 2007/0070699 (2007-03-01), Lee
patent: 1020040068923 (2004-08-01), None
patent: 1020060097880 (2006-09-01), None
patent: 1020070022812 (2007-02-01), None
“Flash Memory,” http://en.wikipedia.org/wiki/Flash—memory, Printed from the Internet on Nov. 16, 2007; 12 pages, Admitted Prior Art.
“Samsung unwraps 40nm ‘charge trap flash’ device,” Solid State Technology, http://solidstate.articles.printthis.clickability.com/pt/cpt?action=cpt&title+solid+-State+Te..., Printed from the Internet on Nov. 16, 2007, 2 pages, Admitted Prior Art.
“Charge trap flash,” http://en.wikipedia.org/wiki/Charge—trap—flash, Printed from the Internet on Nov. 16, 2007, 1 page, Admitted Prior Art.
Sel Jongsun
Shin Yoo-cheol
Sim Jaesung
Myers Bigel & Sibley & Sajovec
Nguyen Van-Thu
Samsung Electroncis Co., Ltd.
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