Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2006-08-29
2008-11-04
Pizarro, Marcos D. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257SE45003
Reexamination Certificate
active
07446333
ABSTRACT:
Nonvolatile memory devices and methods of manufacturing the same are provided. The nonvolatile memory devices may include an oxide layer formed of a resistance conversion material, a lower electrode, a nano-wire layer formed of a transition metal on the lower electrode, and an upper electrode formed on the oxide layer. According to example embodiments, a reset current may be stabilized by unifying a current path on the oxide layer.
REFERENCES:
patent: 6610463 (2003-08-01), Ohkura et al.
patent: 7079250 (2006-07-01), Mukai
patent: 2002/0014621 (2002-02-01), Den et al.
Baek In-Gyu
Cha Young-Kwan
Kim Dong-Chul
Lee Moon-Sook
Park Sang-Jin
Harness Dickey & Pierce PLC
Jahan Bilkis
Pizarro Marcos D.
Samsung Electronics Co,. Ltd
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