Nonvolatile memory device with simultaneous read/write

Details Nonvolatile memory device with simultaneous read/write Nonvolatile memory device with simultaneous read/write

2005-09-27

2005-09-27

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S189040, C365S185220

Reexamination Certificate

active

06950337

ABSTRACT:
A nonvolatile memory device with simultaneous read/write has a memory array formed by a plurality of cells organized into memory banks, and a plurality of first and second sense amplifiers. The device further has a plurality of R/W selectors associated to respective sets of cells and connecting the cells of the respective sets of cells alternately to the first sense amplifiers and to the second sense amplifiers.

REFERENCES:
patent: 4875189 (1989-10-01), Obara
patent: 5847994 (1998-12-01), Motoshima et al.
patent: 5847998 (1998-12-01), Van Bushkirk
patent: 5894437 (1999-04-01), Chang et al.
patent: 6016270 (2000-01-01), Thummalapally et al.
patent: 6031785 (2000-02-01), Park et al.
patent: 6331950 (2001-12-01), Kuo et al.
patent: 2002/0131301 (2002-09-01), Elmhurst
patent: 0 745 995 (1996-12-01), None
Pathak, B., et al., “A 1.8V 64Mb 100Mhz Flexible Read While Write Flash Memory,” inProceedings of the IEEE International Solid-State Circuits Conference, Piscataway, NJ, Feb. 5-7, 2001, pp. 32-33, 424-425.

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