Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2009-06-12
2010-10-26
Phan, Trong (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S185110, C365S185210, C365S226000
Reexamination Certificate
active
07821829
ABSTRACT:
A transistor is arranged for electrically isolating a sense amplifier formed of a thin film transistor from a data line electrically coupled to the sense amplifier. When a write driver drives the data line, a control signal is applied to isolate the data line from the sense amplifier.
REFERENCES:
patent: 5260903 (1993-11-01), Suyama et al.
patent: 5343437 (1994-08-01), Johnson et al.
patent: 5724292 (1998-03-01), Wada
patent: 5768194 (1998-06-01), Matsubara et al.
patent: 6031759 (2000-02-01), Ohashi
patent: 6031779 (2000-02-01), Takahashi et al.
patent: 6069824 (2000-05-01), Kojima et al.
patent: 6144584 (2000-11-01), Kunori et al.
patent: 6185151 (2001-02-01), Cho
patent: 6222779 (2001-04-01), Saito et al.
patent: 6314028 (2001-11-01), Kono
patent: 6339549 (2002-01-01), Jinbo et al.
patent: 6355531 (2002-03-01), Mandelman et al.
patent: 6377502 (2002-04-01), Honda et al.
patent: 6392955 (2002-05-01), Pawlowski
patent: 6462999 (2002-10-01), Amano
patent: 6487123 (2002-11-01), Takagi
patent: 6614691 (2003-09-01), Roohparvar
patent: 6631092 (2003-10-01), Yamasaki
patent: 6760254 (2004-07-01), Taura
patent: 6768354 (2004-07-01), Yamazaki et al.
patent: 6826108 (2004-11-01), Kang
patent: 6831860 (2004-12-01), Lee et al.
patent: 6873561 (2005-03-01), Ooishi
patent: 6879513 (2005-04-01), Ooishi
patent: 6906971 (2005-06-01), Nakamura et al.
patent: 6927999 (2005-08-01), Sim et al.
patent: 6992946 (2006-01-01), Ooishi
patent: 7110282 (2006-09-01), Kono et al.
patent: 7339825 (2008-03-01), Iioka et al.
patent: 7352616 (2008-04-01), Kang et al.
patent: 7411856 (2008-08-01), Horiguchi et al.
patent: 04-092293 (1992-03-01), None
patent: 5-210976 (1993-08-01), None
patent: 8-329690 (1996-12-01), None
patent: 11-176180 (1999-07-01), None
patent: 2000-516380 (2000-12-01), None
patent: 2001-250390 (2001-09-01), None
patent: 2003-501801 (2003-01-01), None
patent: 2003-077284 (2003-03-01), None
patent: WO 98/56002 (1998-12-01), None
patent: WO 00/74126 (2000-12-01), None
Japanese Office Action, with English Translation, issued in Japanese Patent Application No. JP 2003-323358, mailed Feb. 17, 2009.
Notice of Grounds of Rejection for Japanese Patent Application No. 2003-323358, mailed Jul. 7, 2009, and English Translation.
Kubo Takashi
Ogura Taku
Yamauchi Tadaaki
McDermott Will & Emery LLP
Phan Trong
Renesas Technology Corp.
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