Nonvolatile memory device including circuit formed of thin...

Details Nonvolatile memory device including circuit formed of thin... Nonvolatile memory device including circuit formed of thin...

2009-06-12

2010-10-26

Phan, Trong (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185110, C365S185210, C365S226000

Reexamination Certificate

active

07821829

ABSTRACT:
A transistor is arranged for electrically isolating a sense amplifier formed of a thin film transistor from a data line electrically coupled to the sense amplifier. When a write driver drives the data line, a control signal is applied to isolate the data line from the sense amplifier.

REFERENCES:
patent: 5260903 (1993-11-01), Suyama et al.
patent: 5343437 (1994-08-01), Johnson et al.
patent: 5724292 (1998-03-01), Wada
patent: 5768194 (1998-06-01), Matsubara et al.
patent: 6031759 (2000-02-01), Ohashi
patent: 6031779 (2000-02-01), Takahashi et al.
patent: 6069824 (2000-05-01), Kojima et al.
patent: 6144584 (2000-11-01), Kunori et al.
patent: 6185151 (2001-02-01), Cho
patent: 6222779 (2001-04-01), Saito et al.
patent: 6314028 (2001-11-01), Kono
patent: 6339549 (2002-01-01), Jinbo et al.
patent: 6355531 (2002-03-01), Mandelman et al.
patent: 6377502 (2002-04-01), Honda et al.
patent: 6392955 (2002-05-01), Pawlowski
patent: 6462999 (2002-10-01), Amano
patent: 6487123 (2002-11-01), Takagi
patent: 6614691 (2003-09-01), Roohparvar
patent: 6631092 (2003-10-01), Yamasaki
patent: 6760254 (2004-07-01), Taura
patent: 6768354 (2004-07-01), Yamazaki et al.
patent: 6826108 (2004-11-01), Kang
patent: 6831860 (2004-12-01), Lee et al.
patent: 6873561 (2005-03-01), Ooishi
patent: 6879513 (2005-04-01), Ooishi
patent: 6906971 (2005-06-01), Nakamura et al.
patent: 6927999 (2005-08-01), Sim et al.
patent: 6992946 (2006-01-01), Ooishi
patent: 7110282 (2006-09-01), Kono et al.
patent: 7339825 (2008-03-01), Iioka et al.
patent: 7352616 (2008-04-01), Kang et al.
patent: 7411856 (2008-08-01), Horiguchi et al.
patent: 04-092293 (1992-03-01), None
patent: 5-210976 (1993-08-01), None
patent: 8-329690 (1996-12-01), None
patent: 11-176180 (1999-07-01), None
patent: 2000-516380 (2000-12-01), None
patent: 2001-250390 (2001-09-01), None
patent: 2003-501801 (2003-01-01), None
patent: 2003-077284 (2003-03-01), None
patent: WO 98/56002 (1998-12-01), None
patent: WO 00/74126 (2000-12-01), None
Japanese Office Action, with English Translation, issued in Japanese Patent Application No. JP 2003-323358, mailed Feb. 17, 2009.
Notice of Grounds of Rejection for Japanese Patent Application No. 2003-323358, mailed Jul. 7, 2009, and English Translation.

Affiliated with

Also associated with

Rating

Nonvolatile memory device including circuit formed of thin... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile memory device including circuit formed of thin..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile memory device including circuit formed of thin... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4239378