Nonvolatile memory device including circuit formed of thin...

Details Nonvolatile memory device including circuit formed of thin... Nonvolatile memory device including circuit formed of thin...

2011-08-16

2011-08-16

Phan, Trong (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185110, C365S200000, C365S225700, C365S230030, C365S230060

Reexamination Certificate

active

08000143

ABSTRACT:
A transistor is arranged for electrically isolating a sense amplifier formed of a thin film transistor from a data line electrically coupled to the sense amplifier. When a write driver drives the data line, a control signal is applied to isolate the data line from the sense amplifier.

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Japanese Office Action, with English Translation, issued in Japanese Patent Application No. JP 2003-323358, mailed Feb. 17, 2009.
Notice of Grounds of Rejection for Japanese Patent Application No. 2003-323358, maield Jul. 7, 2009, and English Translation.

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