Nonvolatile memory device having two or more resistance...

Details Nonvolatile memory device having two or more resistance... Nonvolatile memory device having two or more resistance...

2005-12-21

2008-07-15

Sefer, A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S358000, C257S350000, C257S516000, C257SE23044

Reexamination Certificate

active

07400027

ABSTRACT:
A nonvolatile memory device having two or more resistors and methods of forming and using the same. A nonvolatile memory device having two resistance layers, and more particularly, to a nonvolatile memory device formed and operated using a resistance layer having memory switching characteristics and a resistance layer having threshold switching characteristics. The nonvolatile semiconductor memory device may include a lower electrode; a first resistance layer having at least two resistance characteristics formed on the lower electrode, a second resistance layer having threshold switching characteristics formed on the first resistance layer, and an upper electrode formed on the second resistance layer.

REFERENCES:
patent: 6426891 (2002-07-01), Katori
patent: 6456524 (2002-09-01), Perner et al.
patent: 6859389 (2005-02-01), Idehara
patent: 2005/0047309 (2005-03-01), Terao et al.
patent: 10-2003-0013762 (2003-02-01), None
patent: 10-2005-0078259 (2005-08-01), None
Machine Translation of Kang, KR10-2005-0078259.
Office Action for corresponding Korean Application No. 10-2004-0109268 and English translation thereof.

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