Nonvolatile memory device having self-refresh function

Details Nonvolatile memory device having self-refresh function Nonvolatile memory device having self-refresh function

1993-11-12

1994-09-13

Clawson, Jr., Joseph E.

Static information storage and retrieval

Floating gate

Particular biasing

36518905, 365202, 365203, 365208, 36523006, 365222, G11C 1140

Patent

active

053474864

ABSTRACT:
In an nonvolatile memory device, a transition circuit is provided between an output of a sense amplifier and an input of a write amplifier. In a write/read mode, data is transited from an input/output buffer via the transition circuit to an input of the write amplifier or from an output of the sense amplifier via the transition circuit to an input/output buffer. In a self-refresh mode, data from the output of the sense amplifier is fed back via the transition circuit to the input of the write amplifier.

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Hitoshi Kume et al. "A 3.42 .mu.m.sup.2 Flash Memory Cell Technology Conformable to a Sector Erase", Symp. VLSI Tech., 1991, pp. 77-78.

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