Static information storage and retrieval – Addressing – Plural blocks or banks
Reexamination Certificate
2005-03-15
2005-03-15
Lam, David (Department: 2818)
Static information storage and retrieval
Addressing
Plural blocks or banks
C365S190000, C365S158000
Reexamination Certificate
active
06868031
ABSTRACT:
A memory block is divided into block units for which parallel data write is performed. Current supply sections capable of supplying a power supply voltage and a ground voltage are provided for block units, independently of one another. With this configuration, in each block unit, writing of data to a selected memory cell is performed by a data write current from the independent current supply section connected to the power supply voltage and the ground voltage. That is, wiring lengths of power supply lines for supplying the power supply voltage and the ground voltage can be shortened. It is therefore possible to suppress a wiring resistance of the power supply line and to supply a desired data write current.
REFERENCES:
patent: 6256224 (2001-07-01), Perner et al.
patent: 6611454 (2003-08-01), Hidaka
Roy Scheuerlein et al., “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in Each Cell”, IEEE ISSCC Digest of Technical Papers, TA7.2 Feb. 2000, pp. 94-95, 128-129, 409-410.
“Forefront of Non-Volatile Memory-The Future in Intel's Mind: From Flash Memory to OUM”, Nikkei Microdevices, Mar., 2002, pp. 65-78 (w/ Partial English Translation).
Takeshi Honda et al., “MRAM-Writing Circuitry to Compensate for Thermal-Variation of Magnetization-Reversal Current”, 2002 Symposium on VLSI Circuits Digest of Technical Papers.
Lam David
McDermott Will & Emery LLP
Renesas Technology Corp.
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