Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2007-09-25
2007-09-25
Phung, Anh (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S185210
Reexamination Certificate
active
11318865
ABSTRACT:
A method for erasing or programming a nonvolatile memory device comprising a memory cell, a sense amplifier, and a page memory, the method comprising the steps of: performing an erasure or programming operation in a manner dependent on the data stored in the page memory, reading out the content of the erased or programmed memory cells, modifying the content of the page memory in a manner dependent on the data read out, and performing a further erasure or programming operation in a manner dependent on the modified data, and the data read out from the erased or programmed memory cell being fed to the page memory, and the content of the page memory being modified in a manner solely dependent on these data and control signals controlling the temporal sequence.
REFERENCES:
patent: 5465235 (1995-11-01), Miyamoto
patent: 6304486 (2001-10-01), Yano
patent: 6798697 (2004-09-01), Hosono et al.
patent: 6826082 (2004-11-01), Hwang et al.
patent: 2006/0268608 (2006-11-01), Noguchi et al.
Deml Christoph
Liebermann Thomas
Eschweiler & Associates LLC
Infineon - Technologies AG
Phung Anh
LandOfFree
Nonvolatile memory device for storing data and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nonvolatile memory device for storing data and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile memory device for storing data and method for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3799355