Nonvolatile memory device and program or erase method using...

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185170, C365S185210, C365S189070

Reexamination Certificate

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07872918

ABSTRACT:
A nonvolatile memory device includes a comparison unit configured to compare a reference voltage and a voltage of each of a plurality of nodes of a sample memory cell string, a state storage unit configured to store state information of each of memory cells depending on the corresponding comparison result of the comparison unit, and a high voltage generation unit configured to change a program start voltage depending on data stored in the state storage unit.

REFERENCES:
patent: 2009/0103365 (2009-04-01), Roohparvar et al.
patent: 10-241388 (1998-09-01), None
Notice of Preliminary Rejection issued from Korean Intellectual Property Office on Feb. 18, 2010.

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