Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2011-01-18
2011-01-18
Le, Thong Q (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185170, C365S185210, C365S189070
Reexamination Certificate
active
07872918
ABSTRACT:
A nonvolatile memory device includes a comparison unit configured to compare a reference voltage and a voltage of each of a plurality of nodes of a sample memory cell string, a state storage unit configured to store state information of each of memory cells depending on the corresponding comparison result of the comparison unit, and a high voltage generation unit configured to change a program start voltage depending on data stored in the state storage unit.
REFERENCES:
patent: 2009/0103365 (2009-04-01), Roohparvar et al.
patent: 10-241388 (1998-09-01), None
Notice of Preliminary Rejection issued from Korean Intellectual Property Office on Feb. 18, 2010.
Chang Seung Ho
Jang Chae Kyu
Kim Jae Yun
Park Se Chun
Park Young Soo
Hynix / Semiconductor Inc.
IP & T Group LLP
Le Thong Q
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