Nonvolatile memory device and method of improving...

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S185210, C365S185230, C365S185250, C365S185270, C365S189070, C365S189090, C365S207000

Reexamination Certificate

active

11133286

ABSTRACT:
A method of programming a non-volatile memory device includes activating a first pump to generate a bitline voltage, and after the bulk voltage reaches a target voltage, detecting whether the bitline voltage is less than a detection voltage. When the bitline voltage is less than the detection voltage, a second pump becomes active.

REFERENCES:
patent: 5483486 (1996-01-01), Javanifard et al.
patent: 5519654 (1996-05-01), Kato et al.
patent: 5642309 (1997-06-01), Kim et al.
patent: 5999475 (1999-12-01), Futatsuya et al.
patent: 6084800 (2000-07-01), Choi et al.
patent: 6266270 (2001-07-01), Nobukata
patent: 6285622 (2001-09-01), Haraguchi et al.
patent: 2003/0099125 (2003-05-01), Kang
patent: 2004/0120188 (2004-06-01), Chih
patent: 2005/0047214 (2005-03-01), Kim et al.
patent: 2006/0017077 (2006-01-01), Tanzawa
patent: 2006/0044923 (2006-03-01), Hahn et al.
patent: 2006/0087888 (2006-04-01), Jeong
patent: 2006/0087890 (2006-04-01), Jeong et al.
patent: 2006/0087891 (2006-04-01), Jeong et al.
patent: 2006/0098491 (2006-05-01), Jeong et al.
patent: 2006/0133147 (2006-06-01), Lee et al.
patent: 2006/0146641 (2006-07-01), Demone
patent: 2000-057791 (2000-02-01), None
patent: 1020000027300 (2000-05-01), None
patent: 1020010010734 (2001-02-01), None
patent: 1020010018711 (2001-03-01), None
patent: 1020020039744 (2002-05-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Nonvolatile memory device and method of improving... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile memory device and method of improving..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile memory device and method of improving... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3799609

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.