Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2006-03-28
2006-03-28
Elms, Richard (Department: 2824)
Static information storage and retrieval
Floating gate
Multiple values
C365S063000, C365S185170
Reexamination Certificate
active
07020018
ABSTRACT:
A structure of non-volatile memory has a plurality of buried bit lines in a substrate, extending along a first direction. Selection gate structure lines are located between the buried bit lines. A plurality of stack dielectric films on the both sides of the selection gate structure lines serving as a charge storage region, does not extend to the bit lines and a dielectric layer contacting a surface of substrate adjacent to stacked dielectric films. Word lines are over the substrate, wherein stacked dielectric films and a dielectric layer are interposed between WL and substrate on the region excluding the selection gate structure line, extending along a second direction different from the first direction. Since the charge storage layer does not completely cover between the selection gate structure lines and the bit lines, an additional control gate is formed.
REFERENCES:
patent: 5414693 (1995-05-01), Ma et al.
patent: 6151248 (2000-11-01), Harari et al.
patent: 6721205 (2004-04-01), Kobayashi
Hsieh Tsung-Min
Lee Chien-Hsing
Lin Chin-Hsi
Liou Jhyy-Cheng
Elms Richard
J.C. Patents
Nguyen Dang
Solid State System Co. Ltd.
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