Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2011-01-11
2011-01-11
Le, Vu A (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S185160
Reexamination Certificate
active
07869278
ABSTRACT:
A nonvolatile memory device includes a plurality of strings each of which is configured with a first select transistor, a second select transistor, and a plurality of memory cells connected in series between the first and second select transistors. A common source line is connected to a source of the second select transistor. A metal interconnection is electrically insulated from the common source line, and connected to the source of the second select transistor.
REFERENCES:
patent: 5191551 (1993-03-01), Inoue
patent: 5698879 (1997-12-01), Aritome et al.
patent: 6953965 (2005-10-01), Goda et al.
patent: 6960500 (2005-11-01), Shin et al.
patent: 2001/0002713 (2001-06-01), Goda et al.
patent: 2005/0023600 (2005-02-01), Shin et al.
patent: 2005/0272204 (2005-12-01), Gil
patent: 2006/0186485 (2006-08-01), Cho et al.
patent: 10-2004-0102349 (2004-12-01), None
patent: 10-2005-0074328 (2005-07-01), None
patent: 10-2006-0060494 (2006-06-01), None
Blakely & Sokoloff, Taylor & Zafman
Hynix / Semiconductor Inc.
Le Vu A
LandOfFree
Nonvolatile memory device and method for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nonvolatile memory device and method for fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile memory device and method for fabricating the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2670006